SKU:1946664653
Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1sp
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Ships within 48 hours · Estimated delivery Jul 8 - Jul 13
Description
Cu Film on Ta/Silicon Wafer, Cu=100 nm Ta=20nm,,Si(100) B-doped ,10x10x0.525mm,R:1-20 ohm.cm, 1spSpecifications: Cu coated Si Wafer ( 10x10 mm size ) Thickness of highly oriented polycrystalline Cu <111> film: 100 nm Thickness of Ta diffusion barrier: 20 50 nm 0. 525 mm thickness Si wafer (Prime Grade) P type, B doped, <100> orientation, SSP Resistivities: 1 20 ohm cm Surface Roughness: as grown , RA < 10 nm Package: One 1000 class clean room with 100 class plastic bag 10 pcs per package for minimum order Related Products Thin Films A Z Crystal
Micropipe Density: <=30 cm^-2
For use with H2 gas
Please click here to see Dislocation vs Thickness of GaN template
D) is provided to reach the location of the sample and deliver reactive gas to sample directly
Other Battery Powders
Size: 5X5 x 0
Heating element: MoSi2 1800 grade
"The Nature of Water on Surfaces of Laboratory Systems and Implications for Heterogeneous Chemistry in the Troposphere
Pulling Mechanism
Conductive type: Si P- type
Heatable vacuum bed assists coating bake-out before collecting
Box Furnace) EQ-D-block-66 6"x 6" 138*138mm
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