, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS" loading="eager" fetchpriority="high" decoding="async"/>
SKU:59414748892
AlN Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUS
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Ships within 48 hours · Estimated delivery Jul 8 - Jul 13
Description
AlN Template on 4" Silicon (Si <111>, P type, B-doped) 4"x 500 nm - FmAlNonSiBc101D05C1FT500nmUSAlN Template on Silicon is made by a PVDNC method. AlN template on Silicon is a cost effective way to replace AlN single crystal substrate. Specifications Useful area: 90% Nominal AlN thickness: 500nm 10%, one side coated, undoped AlN film Front Surface: as grown Back surface: silicon as received AlN orientation: C plane (00. 1) Macro Defect Density: <10 cm^2 Wafer base: Silicon [111] P type, 4" dia x0. 5 mm, , one side polished,R<5 ohm. cm For
Related Products Round Wafer Carriers
Curie Point: 610 oC
Density: 7
Melting point (oC ) 1123
D4*L300 mm 1 VBFH8-FC-4 Fitting Cap with 1/4 inch Quartz Tube Connector 2 EQ-FC-1/4QT Hex Nipple Dia6
Polish: One side polished
Heating zone length: 400mm
Lattice Constant: a=5
Outside Diameter 1/4" Inside Diameter 0
Pumping of corrosive or explosive media
5 mm +/-20 microns
2°C/sec (550°C - 650°C)
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